Effects of Substrate Temperature on Diamond Films Prepared by DC Arc Plasma Jet CVD Method

Zhong Guofang; Shen Fazhen; Tang Weizhong; Lu Fanxiu

doi:10.13374/j.issn1001-053x.1999.04.010

Volume 21 Issue 4

Aug. 2021

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Article Navigation > Chinese Journal of Engineering > 1999 > 21(4): 353-356

Zhong Guofang, Shen Fazhen, Tang Weizhong, Lu Fanxiu. Effects of Substrate Temperature on Diamond Films Prepared by DC Arc Plasma Jet CVD Method[J]. Chinese Journal of Engineering, 1999, 21(4): 353-356. doi: 10.13374/j.issn1001-053x.1999.04.010

Citation:

Zhong Guofang, Shen Fazhen, Tang Weizhong, Lu Fanxiu. Effects of Substrate Temperature on Diamond Films Prepared by DC Arc Plasma Jet CVD Method[J]. Chinese Journal of Engineering, 1999, 21(4): 353-356. doi: 10.13374/j.issn1001-053x.1999.04.010

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Effects of Substrate Temperature on Diamond Films Prepared by DC Arc Plasma Jet CVD Method

doi: 10.13374/j.issn1001-053x.1999.04.010

Material Science and Engineering School, UST Beijing, Beijing 100083, China

Received Date: 1999-01-04
Available Online: 2021-08-27

Abstract

Abstract

The effects of substrate temperature on the growth rate and quality of diamond films by DC arc plasma jet method were studied. It was found that the growth rate and crystallinity of diamond films increased monotonically with the increase of substrate temperature. However, when the substrate temperature increased from 800℃ to 1200℃, the content of non-diamond carbon co-deposited in the diamond films decreased first, and then increased rapidly after reaching a minimum at 1000~1 100℃.
- diamond,
- film,
- substrate,
- temperature