Electrical and magnetic properties of (In, Co) co-doped ZnO films deposited using radio frequency magnetron sputtering

LIU Fen; DAI Ming-jiang; LIN Song-sheng; SHI Qian; SUN Hui

doi:10.13374/j.issn2095-9389.2020.01.11.002

Volume 43 Issue 3

Mar. 2021

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LIU Fen, DAI Ming-jiang, LIN Song-sheng, SHI Qian, SUN Hui. Electrical and magnetic properties of (In, Co) co-doped ZnO films deposited using radio frequency magnetron sputtering[J]. Chinese Journal of Engineering, 2021, 43(3): 385-391. doi: 10.13374/j.issn2095-9389.2020.01.11.002

Citation:

LIU Fen, DAI Ming-jiang, LIN Song-sheng, SHI Qian, SUN Hui. Electrical and magnetic properties of (In, Co) co-doped ZnO films deposited using radio frequency magnetron sputtering[J]. Chinese Journal of Engineering, 2021, 43(3): 385-391. doi: 10.13374/j.issn2095-9389.2020.01.11.002

Citation:

LIU Fen, DAI Ming-jiang, LIN Song-sheng, SHI Qian, SUN Hui. Electrical and magnetic properties of (In, Co) co-doped ZnO films deposited using radio frequency magnetron sputtering[J]. Chinese Journal of Engineering, 2021, 43(3): 385-391. doi: 10.13374/j.issn2095-9389.2020.01.11.002

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Electrical and magnetic properties of (In, Co) co-doped ZnO films deposited using radio frequency magnetron sputtering

doi: 10.13374/j.issn2095-9389.2020.01.11.002

1.
Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, School of Space Science and Physics, Shandong University, Weihai 264209, China
2.
Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Mate-rials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China
3.
College of Materials Science and Engineering, Jilin University, Changchun 130012, China

More Information

Corresponding author: E-mail：huisun@sdu.edu.cn
Received Date: 2020-01-11
Publish Date: 2021-03-26

Abstract

Abstract

Diluted magnetic semiconductors (DMSs) have attracted much attention in recent years due to their dual control of charge and spin degrees of freedom in carriers. Potential applications of DMSs include spin light-emitting diodes, spin field-effect transistors, magnetoresistance random access memory, and ultrafast optical switches. However, the Curie temperature (Tc) of most DMSs below ambient temperature limits the efficiency of these devices. Thus, the biggest challenge for developing DMS materials has been producing host materials that exhibit ferromagnetic behavior above ambient temperature. A series of theoretical simulations and experiments show that the Tc value of ZnO-based DMSs could satisfy this requirement. Incorporation of selective transition metal elements (e.g., Fe²⁺, Co²⁺, Ni²⁺, and Mn²⁺) has been confirmed as an effective way to enhance the magnetic properties of ZnO. In the present research, (In, Co) co-doped ZnO (ICZO) films were deposited by radio frequency sputtering at 100 ℃ on a glass substrate. The sputtering process was performed through In, Co, and ZnO co-sputtering. The presence of ICZO films has been adjusted by changing the target sputtering power. The variation of electric and magnetic properties of the film was studied with different In content. The composition, morphology, structure, electric and magnetic properties of films were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscopy, atomic force microscopy, electron probe microanalyzer, X-ray diffractometer, Hall effect analysis, and vibrating sample magnetometer. The effect of carrier concentration on the magnetic properties of the film was analyzed extensively. These results show that, in the presence of In, the carrier concentration increases, thereby optimizing films’ conductivity. All the films present ferromagnetic behavior at room temperature. Besides, with an influence of bound magnetic polaron model and carrier-mediated exchange mechanisms on the film’s saturation magnetization, carrier-concentration dependent behavior can be expressed in three different regions.
- diluted magnetic semiconductors,
- (In, Co) co-doped ZnO films,
- radio frequency sputtering,
- bound magnetic polaron model,
- magnetic property

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References(36)

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