Long-term oxidation behavior of <i>in situ</i> synthesized SiC particulate-reinforced MoSi<sub>2</sub> matrix composites at 900℃

WANG Chao; DUAN Li-hui; ZHANG Lai-qi

doi:10.13374/j.issn2095-9389.2019.09.008

Volume 41 Issue 9

Sep. 2019

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Article Navigation > Chinese Journal of Engineering > 2019 > 41(9): 1168-1175

WANG Chao, DUAN Li-hui, ZHANG Lai-qi. Long-term oxidation behavior of in situ synthesized SiC particulate-reinforced MoSi2 matrix composites at 900℃[J]. Chinese Journal of Engineering, 2019, 41(9): 1168-1175. doi: 10.13374/j.issn2095-9389.2019.09.008

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WANG Chao, DUAN Li-hui, ZHANG Lai-qi. Long-term oxidation behavior of in situ synthesized SiC particulate-reinforced MoSi₂ matrix composites at 900℃[J]. Chinese Journal of Engineering, 2019, 41(9): 1168-1175. doi: 10.13374/j.issn2095-9389.2019.09.008

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Long-term oxidation behavior of in situ synthesized SiC particulate-reinforced MoSi₂ matrix composites at 900℃

doi: 10.13374/j.issn2095-9389.2019.09.008

1.
School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China
2.
State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China

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Corresponding author: ZHANG Lai-qi, E-mail: zhanglq@ustb.edu.cn
Received Date: 2019-06-20
Publish Date: 2019-09-01

Abstract

Abstract

MoSi₂ intermetallic is well known as one of the most promising compounds used as structural components due to its high melting point, relatively low density, excellent oxidation resistance, and good strength at high temperatures. Unfortunately, MoSi₂ has poor toughness at low temperatures and low creep strength at elevated temperatures. Especially, MoSi₂ alloy usually exhibits severe "pest oxidation" at low temperatures of between 400 and 900℃. These problems limit the applications of MoSi₂ alloys. The main methods to solve these problems are alloying and compounding. Unfortunately, so far, the problem of low-temperature oxidation resistance of MoSi₂ has not been completely solved, and its composite materials are reinforced using external means. In a previous work, SiC particle-reinforced MoSi₂ matrix composites were prepared by an in situ synthesis technique, and the microstructures and the mechanical behaviors at room temperature and high temperature were systematically studied. In this work, the long-term oxidation behavior of in situ synthesized SiC particulate-reinforced MoSi₂ matrix composites with different volume fractions and occurring at 900℃ for 1000 h was investigated. The composites are not observed to disintegrate (pest) after oxidation for 1000 h. The oxidation resistances of six kinds of materials appear excellent. The composite synthesized by in situ possesses higher oxidation resistance than the traditional composite, which is fabricated by hot-pressing the mixture of commercial powders of MoSi₂ and SiC. The surface of scales consists of α-SiO₂ (α-quartz), and the subsurface is composed of Mo₅Si₃. The oxidation of the composites is conducted not only between MoSi₂ and O₂, but also SiC is oxidized. Selective oxidation of Si completely takes place at 900℃. This selective oxidation results in the spontaneously formation of a layer of dense SiO₂ protective scale on the MoSi₂ surface, making the material exhibit excellent long-term oxidation resistance.
- composite,
- MoSi₂,
- SiC particulate reinforcement,
- in situ synthesis,
- oxidation behavior at low temperature,
- pest

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References(22)

References

[1]	Fitzer E, Benesovsky F. Molybdenum disilicide as high-temperature material//Proceedings of 2nd Plansee Seminar. Vienna, 1955: 79
[2]	Chou T C, Nieh T G. New observations of MoSi₂ pest at 500℃. Scripta Metall Mater, 1992, 26(10): 1637 doi: 10.1016/0956-716X(92)90270-O
[3]	McKamey C G, Tortorelli P F, DeVan J H, et al. A study of pest oxidation in polycrystalline MoSi₂. J Mater Res, 1992, 7(10): 2747 doi: 10.1557/JMR.1992.2747
[4]	Westbrook J H, Wood D L. "PEST" degradation in beryllides, silicides, aluminides and related compounds. J Nucl Mater, 1964, 12(2): 208 doi: 10.1016/0022-3115(64)90142-4
[5]	Chen J X, Li C H, Fu Z, et al. Low temperature oxidation behavior of a MoSi₂-based material. Mater Sci Eng A, 1999, 261(1-2): 239 doi: 10.1016/S0921-5093(98)01071-5
[6]	Kuchino J, Kurokawa K, Shibayama T, et al. Effect of microstructure on oxidation resistance of MoSi₂ fabricated by spark plasma sintering. Vacuum, 2004, 73(3-4): 623 doi: 10.1016/j.vacuum.2003.12.081
[7]	Arreguín-Zavala J, Turenne S, Martel A, et al. Microwave sintering of MoSi₂-Mo₅Si₃ to promote a final nanometer-scale microstructure and suppressing of pesting phenomenon. Mater Charact, 2012, 68: 117 doi: 10.1016/j.matchar.2012.03.014
[8]	Dasgupta T, Umarji A M. Improved ductility and oxidation resistance in Nb and Al co-substituted MoSi₂. Intermetallics, 2008, 16(6): 739 doi: 10.1016/j.intermet.2008.01.006
[9]	Potanin A Y, Pogozhev Y S, Levashov E A, et al. Kinetics and oxidation mechanism of MoSi₂-MoB ceramics in the 600-1200℃ temperature range. Ceram Int, 2017, 43(13): 10478 doi: 10.1016/j.ceramint.2017.05.093
[10]	周宏明, 柳公器, 肖來榮, 等. Si₃N₄顆粒及SiC晶須強韌化MoSi₂復合材料的低溫氧化行為. 無機材料學報, 2009, 24(5): 929 https://www.cnki.com.cn/Article/CJFDTOTAL-WGCL200905012.htm Zhou H M, Liu G Q, Xiao L R, et al. Low temperature oxidation behavior of MoSi₂ composites strengthened and toughened by Si₃N₄ particles and SiC whiskers. J Inorg Mater, 2009, 24(5): 929 https://www.cnki.com.cn/Article/CJFDTOTAL-WGCL200905012.htm
[11]	Feng P Z, Wang X H, He Y Q, et al. Effect of high-temperature preoxidation treatment on the low-temperature oxidation behavior of a MoSi₂-based composite at 500℃. J Alloys Compd, 2009, 473(1-2): 185 doi: 10.1016/j.jallcom.2008.06.032
[12]	Taleghani P R, Bakhshi S R, Erfanmanesh M, et al. Improvement of MoSi₂ oxidation resistance via boron addition: fabrication of MoB/MoSi₂ composite by mechanical alloying and subsequent reactive sintering. Powder Technol, 2014, 254: 241 doi: 10.1016/j.powtec.2014.01.034
[13]	Wen S H, Zhou C G, Sha J B. Improvement of oxidation resistance of a Mo-62Si-5B (at. %) alloy at 1250℃ and 1350℃ via an in situ pre-formed SiO₂ fabricated by spark plasma sintering. Corros Sci, 2017, 127: 175 doi: 10.1016/j.corsci.2017.08.019
[14]	孫祖慶, 張來啟, 楊王玥, 等. 一種制備碳化硅顆粒增強二硅化鉬基復合材料的原位復合方法: 中國專利CN01141978.4. 2002-04-17 Sun Z Q, Zhang L Q, Yang W Y, et al. A Method of the Preparation of In Situ Silicon Carbide Particulates Reinforced Molybdenum Disilicide Matrix Composites: China Patent CN01141978.4. 2002-04-17
[15]	張來啟, 孫祖慶, 張躍, 等. 原位SiC顆粒增強MoSi₂基復合材料的顯微組織和力學性能. 金屬學報, 2001, 37(3): 325 doi: 10.3321/j.issn:0412-1961.2001.03.022 Zhang L Q, Sun Z Q, Zhang Y, et al. Microstructure and mechanical properties of in situ SiC particulates reinforced MoSi₂ matrix composite. Acta Metall Sin, 2001, 37(3): 325 doi: 10.3321/j.issn:0412-1961.2001.03.022
[16]	傅曉偉, 楊王玥, 張來啟, 等. 原位合成MoSi₂-30%SiC復合材料高溫蠕變行為. 金屬學報, 2002, 38(7): 731 doi: 10.3321/j.issn:0412-1961.2002.07.013 Fu X W, Yang W Y, Zhang L Q, et al. High temperature creep behavior of in situ synthesized MoSi₂-30%SiC composite. Acta Metall Sin, 2002, 38(7): 731 doi: 10.3321/j.issn:0412-1961.2002.07.013
[17]	張來啟, 潘昆明, 段立輝, 等. 原位合成MoSi₂-SiC復合材料在500℃的氧化行為. 金屬學報, 2013, 49(11): 1303 https://www.cnki.com.cn/Article/CJFDTOTAL-JSXB201311005.htm Zhang L Q, Pan K M, Duan L H, et al. Oxidation behavior of in-situ synthesized MoSi₂-SiC composites at 500℃. Acta Metall Sin, 2013, 49(11): 1303 https://www.cnki.com.cn/Article/CJFDTOTAL-JSXB201311005.htm
[18]	張來啟, 段立輝, 林均品. 原位合成MoSi₂-SiC復合材料700℃的氧化行為. 材料研究學報, 2015, 29(8): 561 https://www.cnki.com.cn/Article/CJFDTOTAL-CYJB201508001.htm Zhang L Q, Duan L H, Lin J P. Oxidation behavior of in-situ synthesized MoSi₂-SiC composites at 700℃. Chin J Mater Res, 2015, 29(8): 561 https://www.cnki.com.cn/Article/CJFDTOTAL-CYJB201508001.htm
[19]	Wirkus C D, Wilder D R. High-temperature oxidation of molybdenum disilicide. J Am Ceram Soc, 1966, 49(4): 173 doi: 10.1111/j.1151-2916.1966.tb13227.x
[20]	Chou T C, Nieh T G. Comparative studies on the pest reactions of single-and poly-crystalline MoSi₂. Scripta Metall Mater, 1992, 27(1): 19 doi: 10.1016/0956-716X(92)90312-3
[21]	Meschter P J. Low-temperature oxidation of molybdenum disilicide. Metall Trans A, 1992, 23(6): 1763 doi: 10.1007/BF02804369
[22]	Bartlett R W, McCamont J W, Gage P R. Structure and chemistry of oxide films thermally grown on molybdenum silicides. J Am Ceram Soc, 1965, 48(11): 551 doi: 10.1111/j.1151-2916.1965.tb14671.x