Selective abnormal growth behavior of Goss grains in a grain-oriented silicon steel

Experiments were performed by interrupting secondary recrystallization processes in a CGO silicon steel.The results show that the average size of Goss grains is obviously larger than that of other grains just before abnormal growth in the temperature-rising process of secondary recrystallization.The amount of different orientation grains at this stage is almost the same as that in a decarburizing-annealed sample.Goss grains can first grow abnormally due to preferred coarsening of such inhibitors as MnS in Goss grains.It is noted that only Goss grains with seriously curved grain boundaries or several grains merged by slight growth can be the nuclei of secondary grains.During abnormal growth of Goss grains,their grain boundaries have zigzag shapes.It is believed that this unique growth pattern is the reason that secondary recrystallization can finish quickly.