Research on the process of diamond coatings containing Si

LIU Sutian; LIU Wei; HEI Lifu; TANG Weizhong; LV Fanxiu

doi:10.13374/j.issn1001-053x.2007.04.022

Volume 29 Issue 4

Aug. 2021

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LIU Sutian, LIU Wei, HEI Lifu, TANG Weizhong, LV Fanxiu. Research on the process of diamond coatings containing Si[J]. Chinese Journal of Engineering, 2007, 29(4): 408-412,446. doi: 10.13374/j.issn1001-053x.2007.04.022

Citation:

LIU Sutian, LIU Wei, HEI Lifu, TANG Weizhong, LV Fanxiu. Research on the process of diamond coatings containing Si[J]. Chinese Journal of Engineering, 2007, 29(4): 408-412,446. doi: 10.13374/j.issn1001-053x.2007.04.022

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Research on the process of diamond coatings containing Si

doi: 10.13374/j.issn1001-053x.2007.04.022

Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China

Received Date: 2006-02-21
Rev Recd Date: 2006-04-18

Available Online: 2021-08-16

Abstract

Abstract

A new process of diamond coatings was explored with H₂, CH₄ and D₄ as precursors by using microwave plasma chemical vapor deposition technique. The diamond coating containing Si element was deposited on a cemented carbide substrate. This process was attempted to enhance the adhesion of the diamond coating to the substrate. The results reveal that when the flow of D₄ is larger than that of CH₄ the cellular structure is obtained, and the diamond coating with good quality and good adhesion is deposited with a little Si in it only when the flow of D₄ is equivalent to that of CH₄.
- diamond coatings,
- microwave plasma chemical vapor deposition (MPCVD),
- octamethylcyclotetrasiloxane,
- cemented carbide,
- adhesion