Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity

Zhou Guohui; Jiao Zhijie; Wu Jun; Zhou Fuxin; Chu Wuyang

doi:10.13374/j.issn1001-053x.1999.01.008

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Zhou Guohui, Jiao Zhijie, Wu Jun, Zhou Fuxin, Chu Wuyang. Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity[J]. Chinese Journal of Engineering, 1999, 21(1): 26-28. doi: 10.13374/j.issn1001-053x.1999.01.008

Citation:

Zhou Guohui, Jiao Zhijie, Wu Jun, Zhou Fuxin, Chu Wuyang. Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity[J]. Chinese Journal of Engineering, 1999, 21(1): 26-28. doi: 10.13374/j.issn1001-053x.1999.01.008

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Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity

doi: 10.13374/j.issn1001-053x.1999.01.008

1. Applied Science School, UST Beijing, Beijing 100083, China;
2. Metallurgical School, UST Beijing;
3. Institute of Mechanics, Chinese Academy of Sciences, 100080

Received Date: 1998-01-04
Available Online: 2021-08-27

Abstract

Abstract

Cu and Al single crystals with molecular dynamics simulation method was studied.Under mode Ⅱ loading, the influence of loading rate on dislocation emission, width of stacking fault and dislocation velocity was analyzed. The simulated results show that width of stacking fault decreases as loading rate increases, while dislocation velocity increase dramatically.If loading rate is very high, system energy will be released by dislocation emission, the twinning is formed as well.
- molecular dynamics,
- partial dislocation,
- dislocation dissociation,
- Cu,
- Al