Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen

Wu Ping

doi:10.13374/j.issn1001-053x.1997.05.019

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Wu Ping. Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen[J]. Chinese Journal of Engineering, 1997, 19(5): 505-509. doi: 10.13374/j.issn1001-053x.1997.05.019

Citation:

Wu Ping. Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen[J]. Chinese Journal of Engineering, 1997, 19(5): 505-509. doi: 10.13374/j.issn1001-053x.1997.05.019

Wu Ping. Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen[J]. Chinese Journal of Engineering, 1997, 19(5): 505-509. doi: 10.13374/j.issn1001-053x.1997.05.019

Citation:

Wu Ping. Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen[J]. Chinese Journal of Engineering, 1997, 19(5): 505-509. doi: 10.13374/j.issn1001-053x.1997.05.019

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Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen

doi: 10.13374/j.issn1001-053x.1997.05.019

Wu Ping

Applied Science School, UST Beijing, Beijing 100083, China

Received Date: 1997-03-04
Available Online: 2021-09-10

Abstract

Abstract

The internal friction of GD a-Si:H films charged with hydrogen in hydrogen atmosphere were measured by reed vibrating method. As a result, hydrogen related peak appears at 47.5Hz and -46℃ with activation energy (0.30 ±0.05)eV and relaxation time 3.52×10^-9 s. Further research is needed to make the nature clear.
- internal friction,
- amorphous silicon,
- hydrogen related peak