Low Temperature Chemical Vapour Deposition of TiN in TiCl4-NH3-H3 System

Ma Zhaoceng; Zhang Rongming

doi:10.13374/j.issn1001-053x.1992.03.033

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Ma Zhaoceng, Zhang Rongming. Low Temperature Chemical Vapour Deposition of TiN in TiCl4-NH3-H3 System[J]. Chinese Journal of Engineering, 1992, 14(3): 378-382. doi: 10.13374/j.issn1001-053x.1992.03.033

Citation:

Ma Zhaoceng, Zhang Rongming. Low Temperature Chemical Vapour Deposition of TiN in TiCl₄-NH₃-H₃ System[J]. Chinese Journal of Engineering, 1992, 14(3): 378-382. doi: 10.13374/j.issn1001-053x.1992.03.033

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Low Temperature Chemical Vapour Deposition of TiN in TiCl₄-NH₃-H₃ System

doi: 10.13374/j.issn1001-053x.1992.03.033

Department of Chemistry

Received Date: 1991-09-23
Available Online: 2021-10-16

Abstract

Abstract

This papar presented a study of low temperature chemical vapour deposition of TiN in TiCl₄-NH₃-H₂ system. TiN was obtained at the temperature of 500℃. Its hardness HV_0.1 = 17.67kN/mm², and lattice constant a=0.4234nm.The Surface reaction activation energy of TiN was 67.3kJ /mol. Decomposition of TiNCl, from which TiN was produced, was also studied. The activation energy of this reaction was 131kJ/mol.
- chemical vapor deposition at low temperature,
- titanium nitride,
- the ammonolvsis compounds of titanium tetrachloride