Oxidation Kinetics of Silicon-monocrystal and Microstructufe of Oxide Fil

Fan Zishuan; Ling Yanping; Li Wenchao

doi:10.13374/j.issn1001-053x.1987.03.035

Volume 9 Issue 3

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Fan Zishuan, Ling Yanping, Li Wenchao. Oxidation Kinetics of Silicon-monocrystal and Microstructufe of Oxide Fil[J]. Chinese Journal of Engineering, 1987, 9(3): 107-113. doi: 10.13374/j.issn1001-053x.1987.03.035

Citation:

Fan Zishuan, Ling Yanping, Li Wenchao. Oxidation Kinetics of Silicon-monocrystal and Microstructufe of Oxide Fil[J]. Chinese Journal of Engineering, 1987, 9(3): 107-113. doi: 10.13374/j.issn1001-053x.1987.03.035

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Oxidation Kinetics of Silicon-monocrystal and Microstructufe of Oxide Fil

doi: 10.13374/j.issn1001-053x.1987.03.035

Received Date: 1986-09-17
Available Online: 2021-10-28

Abstract

Abstract

Oxidation kinetics of siliconmonocrystal have been studied. The three steps rule of gas-solid reaction have been raised. The reaction rate of oxidation is divided into three stages:in the initial period the reaction rate is controlled by interface chemical reaction; in the second stage by both interface chemical reaction and slow diffusion due to stress; in the third stage by diffusion.And the microstructure of oxide film have been observed by SEM and TEM.
- silicon,
- oxidation kinetics,
- structural analysis