Selective abnormal growth behavior of Goss grains in a grain-oriented silicon steel
-
摘要: 對CGO取向硅鋼二次再結晶中斷實驗進行了研究,發現二次再結晶升溫過程中,僅在異常長大開始前,高斯晶粒尺寸明顯大于其他晶粒,且不同取向晶粒的數量與脫碳退火時的特征一致.高斯晶粒晶界上MnS等抑制劑的優先粗化使高斯晶粒能夠率先發生異常長大,且只有晶界彎曲嚴重或經過很小的生長幾個晶粒就能合并的高斯晶粒才能成為二次晶核.在高斯晶粒異常長大過程中,晶界形貌參差不齊,呈島嶼狀.研究表明:高斯晶粒獨特的生長方式,可能是使二次再結晶能很快完成的原因.Abstract: Experiments were performed by interrupting secondary recrystallization processes in a CGO silicon steel.The results show that the average size of Goss grains is obviously larger than that of other grains just before abnormal growth in the temperature-rising process of secondary recrystallization.The amount of different orientation grains at this stage is almost the same as that in a decarburizing-annealed sample.Goss grains can first grow abnormally due to preferred coarsening of such inhibitors as MnS in Goss grains.It is noted that only Goss grains with seriously curved grain boundaries or several grains merged by slight growth can be the nuclei of secondary grains.During abnormal growth of Goss grains,their grain boundaries have zigzag shapes.It is believed that this unique growth pattern is the reason that secondary recrystallization can finish quickly.
-
Key words:
- silicon steel /
- recrystallization /
- grain size /
- Goss grains /
- grain growth
-

計量
- 文章訪問數: 169
- HTML全文瀏覽量: 37
- PDF下載量: 11
- 被引次數: 0