Giant Magnetoresistance Effect and Microstructure for Metallic Multilayers Ni80Fe20/Cu with Low Saturation Field
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摘要: 采用磁控濺射方法,獲得了具有低飽和場巨磁電阻的Ni80Fe20/Cu由金屬多層膜.在室溫下,其磁電阻和層間耦合狀態隨Cu層厚度的增加呈振蕩變化.在Cu層厚度tcu=1.0nm,2.2nm時磁電阻出現2個峰值分別為19.4%和11.7%,飽和場約為6.4×104 A/m和8×103 A/m,低溫下(77K)磁電阻為對33.2%和27.6%.系統地研究了NiFe層厚度和周期數對多層膜磁電阻的影響.用真空退火方法對樣品進行熱處理,發現多層膜的磁電阻性能有明顯改變.Abstract: The [Ni80 Fe20 /Cu]N multilayers with low saturation field and giant magnetoresistance effect have been successfully prepared by magnetron sputtering method.The oscillatory changes of its magnetoresistance and interlayer exchange coupling with copper thickness increasing have been observed at room temperature while saturation magnetoresistance values reach 19.4% and 11.7% and saturation fields are approximately 64000 A/m and 8 000 A/m when the Cu layer thickness equals 1 and 2.2 nm respectively.Saturation magnetoresistance values are 33.2% and 27.6% at low temperature(77K).Dependence of giant magnetoresistance on microstructure, including NiFe layer thickness and then number of period N, has been studied systematically. Changes in GMR characteristics have been observed after vacuum annealing.
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Key words:
- low saturation field /
- giant magnetoresistance /
- multilayer
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