DIGM and the Diffusion Coefficient Associated with the Migrated Boundaries in Ag/Cu System
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摘要: 用配有X-射線能譜儀的掃描電鏡及光學顯微鏡觀察了400℃、480℃及580℃,經不同時間,Ag膜/Cu塊擴散對中Ag沿Cu晶界擴散誘發的晶界遷移(DIGM)現象。根據遷移晶界的特征,選用與其特征相適應的擴散方程教學解,計算了遷移晶界與靜止晶界的擴散系數。Abstract: Using scanning election microscope equipped with X-ray energy dispersion spectrometer and optical microscope the phenomena of diffusion induced grainboundary migration (DIGM) caused by Ag diffusing along the grain boundaries of Cu in Ag(film)/Cu (bulk) diffusion couple annealed at 400℃,480℃ and 580℃ with various times was studied. Based on the characteristics of the migrated boundaries, the diffusion coefficient of Ag in the migrated grain boundary was calculated by an appropriate solution of the diffusion equation for the migrated boundary.
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Key words:
- Ag/Cu system /
- DIGM /
- DIR /
- diffusion coefficient of the migrated grain boundary
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